The Ceria Slurry used for the semiconductor CMP process is the suspension made by mixing 80nm-300nm particles, ultrapure water, and chemicals. It is used to chemically and mechanically polish the film on the surface. Selective polishing is possible according to the type of additive films such as Ceria Slurry.
Calcined Ceria Slurry
· Particle Size : 80nm~300nm
· Application : Used for semiconductor CMP process.
· Intensity of polishing can be controlled according to particle size.
· Outstanding defect and scratch performance when small-sized particles are used.
· Customizable according to process target.
· Able to mix with certain additives to control selective cost on Silicon Nitride and Poly-Si films.
Colloidal Ceria Slurry
· Particle Size : 10nm~140nm
· Application : Used for semiconductor CMP process.
· Intensity of polishing can be controlled according to particle size.
· Outstanding defect and scratch performance with evenness and thorough distribution of particles for Advanced Device processes.
· Able to mix with certain additives to control selective cost on Silicon Nitride and Poly-Si films.
Additives for Ceria Slurry
Silicon Dioxide Self Stop Additive
· Auto-stop performance after removing unevenness of Silicon Dioxide.
Silicon Nitride, Poly-Si Stop Additive
· Removes selective cost on Silicon Nitride and Poly-Si films.
· Controls Dishing & Erosion.
This slurry used for the Metal Contact / Plug & Poly stages of the CMP process is a suspension that mixes Collodial Silica and functional chemical with DIW. It is applied to the advanced node application to improve the limitation of existing products and realize the performance demanded by world’s top customers.
W Buff Slurry
· Ferric Ion Free & Defect Free
· Controls the topography of W film.
W Bluk Slurry
· Particle Size : 10nm~140nm
· Possible to control the selective ratio of AW and Oxide films (W:OX=10~100:1).
· Exceptional Erosion & Dishing properties in Pattern.
Poly-Si Buff Slurry
· Controls and improves Topography & Roughness of Poly-Si and Silicon Nitride films.
· Improves the defect and scratch performance of Poly-Si & Silicon Nitride films.
Poly-Si Bulk Slurry
· Controls the selective ratio of Poly-Si, Silicon Dioxide, and Silicon Nitride films.
· Outstanding defect and scratch performance Poly-Si film.
It is a functional cleaning chemical that can effectively remove the polishing residues on wafter after CMP, such as Organic Residues and Metal Impurities and it can be used on the Brush Box or Platen of CMP facilities. This is an eco-friendly product and it can improve the semiconductor yield with the exceptional cleansing effect.
Post Ceria Slurry CMP Cleaner
· Easily dissolves Ceria for effective elimination of defects.
· An eco-friendly product that removes HF related to CMP and subsequent SPM (H2SO4 & H2O2 Mixed) process.
· Applies Silicon Dioxide, Silicon Nitride and Poly-Si films.
On Platen Buffing Cleaner
· Hydrophilic surface treatment.
· Applies Silicon Nitride, Poly-Si, and monocrystal Si films.
Post W Slurry CMP Cleaner
· Removes W etching defects and metal contamination.
· Applied to W, Silicon Dioxide, Silicon Nitride, and Barrier Metal films.
Post Cu Slurry CMP Cleaner
· Exceptional resistance to corrosion and chelating.
· Applied to Cu, Silicon, Dioxide, and Barrier Metal films.
Materials Sales Team : materialsales@kctech.co.kr
